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Technical Committee

  • Alexander A. Balandin, University of California, Riverside, USA
  • Alice (Haixia) Zhang, Peking University, China
  • Amit Acharyya, Indian Institute of Technology, Hyderabad, India
  • Anant (M.P.) Anantram, University of Washington, Seattle, USA
  • Attila Bonyar, Budapest University of Technology and Economics, Hungary
  • Azad J. Naeemi, Georgia TECH, USA
  • Bhaskaran Muralidharan, IIT Bombay, India
  • Bonnie Gray, Simon Fraser University, Canada
  • Chi Zhang, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences
  • Chih-Huang Lai, National Tsing Hua University, Taiwan
  • Christof Teuscher, Portland State University, USA
  • Cunjiang Yu, Pennsylvania State University, USA
  • Dan Nicolau, McGill University, Canada
  • Daniel Herr, The Joint School of Nanoscience and Nanoengineering, USA
  • Davide Mencarelli, Università Politecnica delle Marche, Italy
  • Deok-Ho Kim, Johns Hopkins University School of Medicine, USA
  • Dominique Baillargeat, University of Limoges , France
  • Dustin Gilbert, University of Tennessee Knoxville, USA
  • Fangwei Ye, Shanghai Jiao Tong University, China
  • Florin Ciubotaru, IMEC, Belgium
  • Guillermo Villanueva, EPFL, Switzerland
  • Inkyu Park, KAIST, Korea
  • Ioannis Vourkas, Universidad Técnica Federico Santa María, Chile

Track Chairs

 

  • James B. Spicer, John Hopkins University, Baltimore, USA
  • Jie Han, Universitya of Alberta, Canada
  • Jin-Woo Kim, University of Arkansas, USA
  • José Alvim Berkenbrock, University of Saskatchewan, Canada
  • Joseph S. Friedman, University of Texas at Dallas, USA
  • Jun Li, Kansas State University. USA
  • Kakei Xu, University of Electronic Science and Technology of China, China
  • Kremena Makasheva, LAPLACE, CNRS, Toulouse, France
  • Lavanya Aryasomayajula, Intel Corporation, Portland, OR, USA
  • Luca Pierantoni, Università Politecnica delle Marche, Italy
  • Malgorzata Chrzanowska-Jeske, Portland State University, USA
  • Marisa López-Vallejo, Universidad Politécnica de Madrid, Spain
  • Massimo De Vittorio, Istituto Italiano di Tecnologia, Lecce, Italy
  • Matteo Bruno Lodi, University of Cagliari, Italy
  • Mircea Dragoman, IMT Bucharest, Romania
  • Mircea Stan, University of Virginia, USA
  • Murali Krishna Ghatkesar, Delft University of Technology, The Netherlands
  • Nicolae C. Panoiu, University College London, UK
  • Nicoleta Cucu Laurenciu, Delft University of Technology, The Netherlands
  • Peter Ventzek, Tokyo Electron America
  • Santhosh Sivasubramani, Indian Institute of Technology, Hyderabad, India
  • Seiji Samukawa, Tohoku University, Japan
  • Shanshan Liu, Northeastern University, USA
  • Shih-Chi Chen, Chinese University of Hong Kong, Hong Kong
  • Thomas Kin Fong Lei, Chang Gung University, Taiwan
  • Uroš Cvelbar, Jozef Stefan Institute, Slovenia
  • Vito Puliafito, Politecnico di Bari, Italy
  • Xavier Oriols, Universitat Autònoma de Barcelona, Spain
  • Xiaoning Jiang, University of North Carolina State, USA
  • Xiaosheng Zhang, University of Electronic Science and Technology of China, China
  • Xinyu Liu, University of Toronto, Canada
  • Xuhui (Jeff) Sun, Soochow University, China
  • Yong-Hoon Cho, Korea Advanced Institute of Science and Technology, Korea
  • Yoshikazu Hirai, Kyoto University, Japan
  • Youfan Hu, Peking University, China